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advance product information november 8, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com x-band driver amplifier TGA2700-EPU key features ? frequency range: 8-13 ghz ? 25 db nominal gain ? 30dbm output power @ pin=10dbm, midband ? 12 db input return loss ? 10 db output return loss ? 0.25 um 3mi phemt technology ? nominal bias 9v @ 300 ma ? chip dimensions: 1.57 x 1.33 x 0.10 mm (0.062 x 0.052 x 0.004 in) -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 67891011121314 frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 return loss (db) input output gain product description the triquint TGA2700-EPU is an x-band driver amplifier that operates between 6.5-12 ghz, the driver amplifer is designed using triquints proven standard 0.25 um gate phemt production process. the TGA2700-EPU provides typical 30dbm output power at +10 dbm input power @ 8 ghz and has a small signal gain of 25 db. the TGA2700-EPU is 100% dc and rf tested on-wafer to ensure performance compliance. measured fixtured data bias conditions: vd = 9v, idq= 300ma 0 5 10 15 20 25 30 35 678910111213 frequency (ghz) pout (dbm) pin = -2 dbm pin = 0 dbm pin = 2 dbm pin = 4 dbm pin = 6 dbm pin = 8 dbm pin = 10 dbm primary applications ? x-band driver ? point-to-point radio
advance product information november 8, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 12.5 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current 536 ma 2/ | i g | gate supply current 14 ma p in input continuous wave power 20 dbm 2/ p d power dissipation 2.7 w 2/, 3/ t ch operating channel temperature 150 0 c 4/, 5 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ when operated at this bias condition with a base plate temperature of 55 0 c, the median life is 1e+6 hours. 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ these ratings apply to each individual fet. TGA2700-EPU table ii dc probe tests (t a = 25 c, nominal) symbol parameter minimum maximum value idss saturated drain current 75 353 ma gm transconductance 165 398 ms v p pinch-off voltage -1.5 -0.5 v b vgs breakdown voltage gate-source -30 -8 v b vgd breakdown voltage gate-drain -30 -12 v
advance product information november 8, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com table iii rf characterization table (t a = 25 c, nominal) vd = 9 v, id = 300 ma symbol parameter test condition nominal units gain small signal gain f = 6.5-12 ghz 25 db irl input return loss f = 6.5-12 ghz 12 db orl output return loss f = 6.5-12 ghz 10 db p sat saturated output power f = 8-12 ghz 30 dbm toi output toi @ pin = -5dbm f = 8-12 ghz > 36 dbm pae power added efficiency f = -12 ghz 27 % table iv thermal information parameter test conditions t base p late ( o c) t ch ( o c) r t jc ( q c/w) t m (hrs) vd = 9 v i d = 225 ma pdiss = 2.0 w 70 140 2.4 e+6 r q jc thermal resistance (channel to backside of package) vd = 9 v i d = 300 ma pdiss = 2.7 w 55 150 34.7 1 e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier. worst case condition with no rf applied, 100% of dc power is dissipated. TGA2700-EPU
advance product information november 8, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2700-EPU typical fixtured performance bias conditions: vd = 9v, idq = 300ma -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 67891011121314 frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 return loss (db) input output gain 0 5 10 15 20 25 30 35 6 7 8 9 10111213 frequency (ghz) pout (dbm) pin = -2 dbm pin = 0 dbm pin = 2 dbm pin = 4 dbm pin = 6 dbm pin = 8 dbm pin = 10 dbm
advance product information november 8, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com typical fixtured performance bias conditions: vd = 9v, idq = 300ma 10 13 16 19 22 25 28 31 34 6 7 8 9 10111213 frequency (ghz) pout @ pin = +10dbm (dbm) 0 5 10 15 20 25 30 35 40 pae (%) output power pae TGA2700-EPU 0 5 10 15 20 25 30 35 -2-1012345678910 input power (dbm) pout (dbm) & gain (db) 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 id (a) output power id gain @ 10 ghz
advance product information november 8, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 0 3 6 9 12 15 18 21 24 27 30 6 7 8 9 10 11 12 13 14 frequency (ghz) gain (db) -40 deg c room temp. +75 deg. c typical fixtured performance bias conditions: vd = 9v, idq = 300ma TGA2700-EPU -80 -70 -60 -50 -40 -30 -20 -10 0 67891011121314 frequency (ghz) input return loss (db) -40 -30 -20 -10 0 10 20 30 40 output return loss (db) -40 deg c - s11 room temp. - s11 +75 deg. c - s11 -40 deg c - s22 room temp. - s22 +75 deg. c - s22
advance product information november 8, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2700-EPU typical fixtured performance bias conditions: vd = 9v, idq = 300ma 24 26 28 30 32 34 36 38 40 42 8 9 10 11 12 13 frequency (ghz) output toi (dbm) pin = -15 dbm pin = -10 dbm pin = -5 dbm pin = 0 dbm
advance product information november 8, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 0 5 10 15 20 25 30 35 6 7 8 9 10 11 12 13 frequency (ghz) pout (dbm) pin = -2 dbm pin = 0 dbm pin = 2 dbm pin = 4 dbm pin = 6 dbm pin = 8 dbm pin = 10 dbm -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 67891011121314 frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 return loss (db) input output gain TGA2700-EPU typical fixtured performance bias conditions: vd = 9v, idq = 225ma
advance product information november 8, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2700-EPU 0 5 10 15 20 25 30 35 -2-1012345678910 input power (dbm) pout (dbm) & gain (db) 0.2 0.22 0.24 0.26 0.28 0.3 0.32 0.34 0.36 0.38 0.4 id (a) id @ 10 ghz output power gain @ 10 ghz 10 13 16 19 22 25 28 31 34 678910111213 frequency (ghz) pout @ pin = +10dbm (dbm) 0 5 10 15 20 25 30 35 40 pae (%) output power pae typical fixtured performance bias conditions: vd = 9v, idq = 225ma
advance product information november 8, 2004 10 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 24 26 28 30 32 34 36 38 40 42 8 9 10 11 12 13 frequency (ghz) output toi (dbm) pin = -15 dbm pin = -10 dbm pin = -5 dbm pin = 0 dbm typical fixtured performance bias conditions: vd = 9v, idq = 225ma TGA2700-EPU
advance product information november 8, 2004 11 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2700-EPU mechanical characteristics gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. 8qlwvploolphwhuvlqfkhv 7klfnqhvv &klshgjhwrerqgsdgglphqvlrqvduhvkrzqwrfhqwhurierqgsdg &klsvl]hwrohudqfh *1',6%$&.6,'(2)00,& %rqgsdg5),q[[ %rqgsdg9g[[ %rqgsdg5)2xw[[ %rqgsdg9j[[
advance product information november 8, 2004 12 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram TGA2700-EPU 5),1 9g 5)287 9j s) s) x) rkp 9j
advance product information november 8, 2004 13 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. TGA2700-EPU

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